Single step deposition method for nearly stoichiometric CuInSe2 thin films
Identifieur interne : 002551 ( Main/Repository ); précédent : 002550; suivant : 002552Single step deposition method for nearly stoichiometric CuInSe2 thin films
Auteurs : RBID : Pascal:11-0214410Descripteurs français
- Pascal (Inist)
- Couche mince, Pulvérisation cathodique, Dépôt physique phase vapeur, Diffraction RX, Composition phase, Traitement thermique, Sélénium, Propriété électrique, Conductivité électrique, Propriété physique, Microscopie électronique balayage, Microscopie force atomique, Procédé dépôt, Dépôt sous vide, Chalcopyrite, Cuivre Indium Séléniure Mixte, Technique vide, Cellule solaire, Analyse RX dispersion énergie, CuInSe2, 8115C, 6855N, 7350, 7361.
English descriptors
- KwdEn :
- Atomic force microscopy, Cathode sputtering, Chalcopyrite, Copper Indium Selenides Mixed, Deposition process, Electrical conductivity, Electrical properties, Energy-dispersive X-ray analysis, Heat treatments, Phase composition, Physical properties, Physical vapor deposition, Scanning electron microscopy, Selenium, Solar cells, Thin films, Vacuum deposition, Vacuum techniques, XRD.
Abstract
This paper reports the production of high quality copper indium diselenide thin films using pulsed DC magnetron sputtering from a powder target. As-grown thin films consisted of pin-hole free, densely packed grains. X-ray diffraction showed that films were highly orientated in the (112) and/or (204)/(220) direction with no secondary phases present. The most surprising and exciting outcome of this study was that the as-grown films were of near stoichiometric composition, almost independent of the composition of the starting material. No additional steps or substrate heating were necessary to incorporate selenium and create single phase CuInSe2. Electrical properties obtained by hot point probe and four point probe gave values of low resistivity and showed that the films were all p-type. The physical and structural properties of these films were analyzed using X-ray diffraction, scanning electron microscopy and atomic force microscopy. Resistivity measurements were carried out using the four point probe and hot probe methods. The single step deposition process can cut down the cost of the complex multi step processes involved in the traditional vacuum based deposition techniques.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Single step deposition method for nearly stoichiometric CuInSe<sub>2</sub> thin films</title><author><name sortKey="Karthikeyan, Sreejith" uniqKey="Karthikeyan S">Sreejith Karthikeyan</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Materials and Physics Research Centre, University of Salford</s1><s2>Salford, M5 4WT</s2><s3>GBR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Royaume-Uni</country><placeName><settlement type="city">Manchester</settlement><settlement type="town">Salford</settlement><region type="nation">Angleterre</region><region nuts="2" type="region">Grand Manchester</region></placeName><orgName type="university">Université de Salford</orgName></affiliation></author><author><name sortKey="Hill, Arthur E" uniqKey="Hill A">Arthur E. Hill</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Materials and Physics Research Centre, University of Salford</s1><s2>Salford, M5 4WT</s2><s3>GBR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Royaume-Uni</country><placeName><settlement type="city">Manchester</settlement><settlement type="town">Salford</settlement><region type="nation">Angleterre</region><region nuts="2" type="region">Grand Manchester</region></placeName><orgName type="university">Université de Salford</orgName></affiliation></author><author><name sortKey="Pilkington, Richard D" uniqKey="Pilkington R">Richard D. Pilkington</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Materials and Physics Research Centre, University of Salford</s1><s2>Salford, M5 4WT</s2><s3>GBR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Royaume-Uni</country><placeName><settlement type="city">Manchester</settlement><settlement type="town">Salford</settlement><region type="nation">Angleterre</region><region nuts="2" type="region">Grand Manchester</region></placeName><orgName type="university">Université de Salford</orgName></affiliation></author><author><name sortKey="Cowpe, John S" uniqKey="Cowpe J">John S. Cowpe</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Materials and Physics Research Centre, University of Salford</s1><s2>Salford, M5 4WT</s2><s3>GBR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Royaume-Uni</country><placeName><settlement type="city">Manchester</settlement><settlement type="town">Salford</settlement><region type="nation">Angleterre</region><region nuts="2" type="region">Grand Manchester</region></placeName><orgName type="university">Université de Salford</orgName></affiliation></author><author><name sortKey="Hisek, J Rg" uniqKey="Hisek J">J Rg Hisek</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Technische Universität Braunschweig</s1><s2>Hannover</s2><s3>DEU</s3><sZ>5 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="2">Basse-Saxe</region><settlement type="city">Hanovre</settlement></placeName></affiliation></author><author><name sortKey="Bagnall, Darren M" uniqKey="Bagnall D">Darren M. Bagnall</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>School of Electronics and Computer Science, University of Southampton</s1><s2>SO17 1BJ</s2><s3>GBR</s3><sZ>6 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>SO17 1BJ</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">11-0214410</idno><date when="2011">2011</date><idno type="stanalyst">PASCAL 11-0214410 INIST</idno><idno type="RBID">Pascal:11-0214410</idno><idno type="wicri:Area/Main/Corpus">003251</idno><idno type="wicri:Area/Main/Repository">002551</idno></publicationStmt><seriesStmt><idno type="ISSN">0040-6090</idno><title level="j" type="abbreviated">Thin solid films</title><title level="j" type="main">Thin solid films</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Atomic force microscopy</term><term>Cathode sputtering</term><term>Chalcopyrite</term><term>Copper Indium Selenides Mixed</term><term>Deposition process</term><term>Electrical conductivity</term><term>Electrical properties</term><term>Energy-dispersive X-ray analysis</term><term>Heat treatments</term><term>Phase composition</term><term>Physical properties</term><term>Physical vapor deposition</term><term>Scanning electron microscopy</term><term>Selenium</term><term>Solar cells</term><term>Thin films</term><term>Vacuum deposition</term><term>Vacuum techniques</term><term>XRD</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Couche mince</term><term>Pulvérisation cathodique</term><term>Dépôt physique phase vapeur</term><term>Diffraction RX</term><term>Composition phase</term><term>Traitement thermique</term><term>Sélénium</term><term>Propriété électrique</term><term>Conductivité électrique</term><term>Propriété physique</term><term>Microscopie électronique balayage</term><term>Microscopie force atomique</term><term>Procédé dépôt</term><term>Dépôt sous vide</term><term>Chalcopyrite</term><term>Cuivre Indium Séléniure Mixte</term><term>Technique vide</term><term>Cellule solaire</term><term>Analyse RX dispersion énergie</term><term>CuInSe2</term><term>8115C</term><term>6855N</term><term>7350</term><term>7361</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">This paper reports the production of high quality copper indium diselenide thin films using pulsed DC magnetron sputtering from a powder target. As-grown thin films consisted of pin-hole free, densely packed grains. X-ray diffraction showed that films were highly orientated in the (112) and/or (204)/(220) direction with no secondary phases present. The most surprising and exciting outcome of this study was that the as-grown films were of near stoichiometric composition, almost independent of the composition of the starting material. No additional steps or substrate heating were necessary to incorporate selenium and create single phase CuInSe<sub>2</sub>. Electrical properties obtained by hot point probe and four point probe gave values of low resistivity and showed that the films were all p-type. The physical and structural properties of these films were analyzed using X-ray diffraction, scanning electron microscopy and atomic force microscopy. Resistivity measurements were carried out using the four point probe and hot probe methods. The single step deposition process can cut down the cost of the complex multi step processes involved in the traditional vacuum based deposition techniques.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0040-6090</s0></fA01><fA02 i1="01"><s0>THSFAP</s0></fA02><fA03 i2="1"><s0>Thin solid films</s0></fA03><fA05><s2>519</s2></fA05><fA06><s2>10</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Single step deposition method for nearly stoichiometric CuInSe<sub>2</sub> thin films</s1></fA08><fA11 i1="01" i2="1"><s1>KARTHIKEYAN (Sreejith)</s1></fA11><fA11 i1="02" i2="1"><s1>HILL (Arthur E.)</s1></fA11><fA11 i1="03" i2="1"><s1>PILKINGTON (Richard D.)</s1></fA11><fA11 i1="04" i2="1"><s1>COWPE (John S.)</s1></fA11><fA11 i1="05" i2="1"><s1>HISEK (Jörg)</s1></fA11><fA11 i1="06" i2="1"><s1>BAGNALL (Darren M.)</s1></fA11><fA14 i1="01"><s1>Materials and Physics Research Centre, University of Salford</s1><s2>Salford, M5 4WT</s2><s3>GBR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>Technische Universität Braunschweig</s1><s2>Hannover</s2><s3>DEU</s3><sZ>5 aut.</sZ></fA14><fA14 i1="03"><s1>School of Electronics and Computer Science, University of Southampton</s1><s2>SO17 1BJ</s2><s3>GBR</s3><sZ>6 aut.</sZ></fA14><fA20><s1>3107-3112</s1></fA20><fA21><s1>2011</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13597</s2><s5>354000192882090190</s5></fA43><fA44><s0>0000</s0><s1>© 2011 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>26 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>11-0214410</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Thin solid films</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>This paper reports the production of high quality copper indium diselenide thin films using pulsed DC magnetron sputtering from a powder target. As-grown thin films consisted of pin-hole free, densely packed grains. X-ray diffraction showed that films were highly orientated in the (112) and/or (204)/(220) direction with no secondary phases present. The most surprising and exciting outcome of this study was that the as-grown films were of near stoichiometric composition, almost independent of the composition of the starting material. No additional steps or substrate heating were necessary to incorporate selenium and create single phase CuInSe<sub>2</sub>. Electrical properties obtained by hot point probe and four point probe gave values of low resistivity and showed that the films were all p-type. The physical and structural properties of these films were analyzed using X-ray diffraction, scanning electron microscopy and atomic force microscopy. Resistivity measurements were carried out using the four point probe and hot probe methods. The single step deposition process can cut down the cost of the complex multi step processes involved in the traditional vacuum based deposition techniques.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A15C</s0></fC02><fC02 i1="02" i2="3"><s0>001B60H55N</s0></fC02><fC02 i1="03" i2="3"><s0>001B70C50</s0></fC02><fC02 i1="04" i2="3"><s0>001B70C61</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Couche mince</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Thin films</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Pulvérisation cathodique</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Cathode sputtering</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Dépôt physique phase vapeur</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Physical vapor deposition</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Diffraction RX</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>XRD</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Composition phase</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Phase composition</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Composición fase</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Traitement thermique</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Heat treatments</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Sélénium</s0><s2>NC</s2><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Selenium</s0><s2>NC</s2><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Propriété électrique</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Electrical properties</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Conductivité électrique</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Electrical conductivity</s0><s5>09</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Propriété physique</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Physical properties</s0><s5>10</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Microscopie électronique balayage</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Scanning electron microscopy</s0><s5>11</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Microscopie force atomique</s0><s5>12</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Atomic force microscopy</s0><s5>12</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Procédé dépôt</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Deposition process</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Procedimiento revestimiento</s0><s5>13</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Dépôt sous vide</s0><s5>14</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Vacuum deposition</s0><s5>14</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Chalcopyrite</s0><s5>15</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Chalcopyrite</s0><s5>15</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>Cuivre Indium Séléniure Mixte</s0><s2>NC</s2><s2>NA</s2><s5>16</s5></fC03><fC03 i1="16" i2="X" l="ENG"><s0>Copper Indium Selenides Mixed</s0><s2>NC</s2><s2>NA</s2><s5>16</s5></fC03><fC03 i1="16" i2="X" l="SPA"><s0>Mixto</s0><s2>NC</s2><s2>NA</s2><s5>16</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Technique vide</s0><s5>29</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Vacuum techniques</s0><s5>29</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Cellule solaire</s0><s5>30</s5></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Solar cells</s0><s5>30</s5></fC03><fC03 i1="19" i2="X" l="FRE"><s0>Analyse RX dispersion énergie</s0><s5>31</s5></fC03><fC03 i1="19" i2="X" l="ENG"><s0>Energy-dispersive X-ray analysis</s0><s5>31</s5></fC03><fC03 i1="19" i2="X" l="SPA"><s0>Análisis RX dispersión energía</s0><s5>31</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>CuInSe2</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>8115C</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>6855N</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>7350</s0><s4>INC</s4><s5>73</s5></fC03><fC03 i1="24" i2="3" l="FRE"><s0>7361</s0><s4>INC</s4><s5>74</s5></fC03><fN21><s1>143</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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